Functional Device Engineering Laboratory / Kyushu University

Publication

This page includes Japanese contents.

2023

Award

FY2022 IGSES School award, Shingo NASU

IWDTF Best Paper Award, Keisuke YAMAMOTO

Papars, proceedings

7. Rectifying Schottky Contact in ZrN/polycrystalline p-Ge
IEEE Journal of the Electron Devices Society, Vol. 11, 553 (2023)
K. Moto, K. Toko, T. Takayama, T. Imajo, T. Ishiyama, and K. Yamamoto LINK

6. Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), pp. 249-250
L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

5. Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), pp. 525-526
R. Loo, A. Hikavyy, D. Wang, K. Yamamoto, T. Sipőcz, Á. Kerekes, A. Akula, and Y. Shimura

4. High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), pp. 873-874
T. Koga, T. Nagano, K. Moto, K. Yamamoto, and T. Sadoh

3. Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), pp. 533-534
K. Moto, K. Toko, T. Takayama, T. Ishiyama, K. Yamamoto

2. Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain
Materials Science in Semiconductor Processing, Vol. 167, No. 15, 107763 (2023)
K. Yamamoto, T. Matsuo, M. Yamada, Y. Wagatsuma, K. Sawano, K. Hamaya LINK

1. Fabrication and Characterization of Germanium n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator: Formation of underlying Germanium Oxide and Its Electrical Characteristics
Materials Science in Semiconductor Processing, Vol. 162, No. 1, 107504 (2023)
W.-C. Wen, D. Wang, H. Nakashima, K. Yamamoto LINK

Conference presentations

H. Kuwazuru, D. Wang, and K. Yamamoto
Fabrication of a Ge gate stack using plasma irradiation and low-temperature annealing for Ge applications
14th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.12.14

L. Huang, K. Moto, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Inversion Mode n-channel TFT Fabricated on Solid-Phase Crystallized Polycrystalline Ge at Low Temperature Improved by Metal Induced Dopant Activation
14th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.12.14

A. Honda, N. Shimizu, Y. J. Feng, K. Yamamoto, S. Shibayama, O. Nakatsuka, and D. Wang
Observation of acceptor-type defect levels using low-temperature Hall effect measurement for GeSn layers fabricated by molecular beam epitaxy
14th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.12.14

K. Yamamoto(invited), W.-C. Wen, D. Wang, and H. Nakashima
Electrical and Structural Characterization of Thermally Oxidized Yttrium Oxide on Germanium
14th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.12.14

鍬釣一、王冬、山本圭介
リセスチャネル構造によるメタルS/D 型Ge n-MOSFET の電流駆動力改善
第14回半導体材料・デバイスフォーラム, 2023.12.9

Y. J. Feng, K. Yamamoto, A. Honda, N. Shimizu, D. Wang
Measurement of Fowler-Nordheim tunneling barrier height in Ge-MIS structures
The 8th Asia Applied Physics Conference (2023 年(令和5年度) 応用物理学会九州支部学術講演会), 2023.11.26

森本敦己、茂藤健太、黄林昱、居倉功太、石山隆光、都甲薫、王冬、山本圭介
多結晶 p 型 Ge 上における CMOS プロセスの検討
2023 年(令和5年度) 応用物理学会九州支部学術講演会, 2023.11.26

麻生大聖、鍬釣一、王冬、山本圭介
Ge スピン MOSFET に向けたゲートスタックの低温形成とフラットバンド電圧制御
2023 年(令和5年度) 応用物理学会九州支部学術講演会, 2023.11.26

西崎理万、王冬、山本圭介、浦谷泰基、坂井田佳紀、菱木繁臣
プレーナチャネル構造による 3C-SiC n-MOSFET の高性能化
2023 年(令和5年度) 応用物理学会九州支部学術講演会, 2023.11.25

H. Kuwazuru, D. Wang, K. Yamamoto
Low Temperature (~210 °C) Fabrication of Ge MOS Capacitor using Plasma Oxidation and Oxi-Nitridation for the Interlayer Formation
2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
2023.10.25

K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, V. Depauw
Fabrication and Electrical Characterization of Ge-on-Insulator based on Ge-on-Nothing Technology
2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
2023.10.24

K. Yamamoto(invited), W.-C. Wen, D. Wang, H. Nakashima
Thermally oxidized Yttrium Oxide on Germanium for n-MOS Capacitor and Field-Effect Transistor
244th ECS meeting, 2023.10.9

Linyu huang, Kenta Moto, Takamitsu Ishiyama, Kaoru Toko, Dong Wang, Keisuke Yamamoto
Fabrication of Inversion Mode n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge
2023年第84回応用物理学会秋季学術講演会, 2023.9.20

鍬釣一、王冬、山本圭介
リセスチャネル化によるメタルS/D 型Ge n-MOSFET の電流駆動力向上(III)
2023年第84回応用物理学会秋季学術講演会, 2023.9.20

L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization
2023 International Conference on Solid State Device and Materials (SSDM 2023)
2023.9.8

K. Moto, K. Toko, T. Takayama, T. Ishiyama, and K. Yamamoto
Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition
2023 International Conference on Solid State Device and Materials (SSDM 2023)
2023.9.7

K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw
Evaluation of the physical properties of Ge-on-insulator based on Ge-on-Nothing and layer transfer
International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023), 2023.5.25

K. Moto, K. Toko, T. Takayama, T. Ishiyama, and K. Yamamoto
Control of Schottky Barrier Height at Metal/Polycrystalline Ge Interfaces with Fermi-Level Pinning Alleviation
International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023), 2023.5.24

N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang
N-type characteristics of undoped Ge_0.967Sn_0.033 fabricated on bulk n-Ge
International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023), 2023.5.22

H. Kuwazuru, S. Nasu, D. Wang, and K. Yamamoto
Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.24

L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.24

K. Moto, K. Yamamoto, and K. Toko
Polycrystalline Thin-Film Transistor Based on Solid-Phase Crystallized Ge and GeSn
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.23

N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang
N-type characteristics of undoped GeSn in the low Sn concentration region
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.23