Publication

This page includes Japanese contents.

2000s

Conference presentations

44.   Defect-Induced Deep Levels in SiGe-On-Insulator Substrate Fabricated using Ge Condensation Technique
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), Sendai, pp. 396-397 (2009)
H. Yang, D. Wang, and H. Nakashima

43.   Optical and Electrical Characterization of Defects in SiGe-on-Insulator
The Electrochemical Society Transactions Vol. 25, No.7, pp. 99-114 (2009)
H. Nakashima, D. Wang, and H. Yang

42.   Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique
Appl. Phys. Lett., Vol. 95, No. 12, pp. 122103-1-3 (2009)
H. Yang, D. Wang, and H. Nakashima

41.   Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation
Solid-State Electronics, Vol. 53, No. 8, pp. 841-849 (2009)
D. Wang and H. Nakashima

40.   Electrical and structural evaluations of high-k gate dielectrics fabricacated using plasma oxidation and the subsequent annealing for a Hf/SiO2/Si structure
Semicond. Sci. Technol., Vol. 23, No. 12, pp. 125020-1-6 (2008)
H. Nakashima, D. Wang, Y. Sugimoto, Y. Suehiro, K. Yamamoto, M. Kajiwara and K. Hirayama

39.   Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure
Proceeding of 9th International Conference on Solid-State and Integrated-CircuitTechnology (ICSICT2008), C5.7 / pp. 1- 4. (2008)
H. Nakashima, Y. Sugimoto, Y. Suehiro, K. Yamamoto, M. Kajiwara, K. Hirayama, D. Wang

38.   Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation
Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008),C4.6 / pp. 1-4. (2008)
D. Wang, H. Yang, J. Morioka, T. Kitamura, H. Nakashima

37.   Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal
Thin Solid Films, Vol. 517, No. 1, pp. 204-206 (2008)
Y. Sugimoto, K. Yamamoto, M. Kajiwara, Y. Suehiro, D. Wang, and H. Nakashima

36.   Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence
Thin Solid Films, Vol. 517, No. 1, pp. 31-33 (2008)
D. Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, and T. Kitamura

35.   Electrical and Structural Evaluations of Ultrathin SiGe-and Ge-on-insulator Fabricated Using Ge Condensation by Dry Oxidation
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM2008), Tsukuba, pp. 438-439 (2008)
H. Yang, D. Wang, H. Gao, K. Hirayama, K. Ikeda, S. Hata, H. Nakashima, H. Nakashima

34.   Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator
Appl. Phys. Lett., Vol. 93, No. 7, pp. 072104-1-3 (2008)
H. Yang, D. Wang, H. Nakashima, H. Gao, K. Hirayama, K. Ikeda, S. Hata, and H. Nakashima

33.   Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge Condensation by dry oxidation (Invited)
4thInternational SiGe Technology and Device Meeting (ISTDM2008), Abstract, pp. 125-126(2008)
H. Nakashima and D. Wang

32.   Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition
Appl. Phys. Lett., Vol. 91, No. 24, pp. 241918-1-3(2007)
D. Wang, H. Nakashima, J. Morioka and T. Kitamura

31.   Effective work function modulation of TaN metal gate on HfO2after postmetallization annealing
Appl. Phys. Lett., Vol. 91, No. 11, pp. 112105-1-3(2007)
Y. Sugimoto, M. Kajiwara, K. Yamamoto, Y. Suehiro, D. Wang and H. Nakashima

30.   Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence,
5th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, Marseille, pp. 26-27(2007)
D. Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, and T. Kitamura

29.   Dependences of effective work functions of TaN on HfO2and SiO2on post-metallization anneal,
5th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, Marseille,pp. 194-195(2007)
Y. Sugimoto, K. Yamamoto, M. Kajiwara, Y. Suehiro, D. Wang, and H. Nakashima

28.   TaN/Hf系high-k /Siゲートスタック構造の電気特性
九州大学大学院総合理工学報告，第29巻，第4号，pp. 371-378(2007)
杉本 陽平, 山本 圭介, 梶原 誠生, 末廣 雄策, 中島 寛

27.   Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH4OH/H2O2 Solution and Hf Metal Hard Mask
Jpn. J. Appl. Phys., Vol. 46, No. 9, pp. L211-L214(2007)
Y. Sugimoto, K. Yamamoto, and H. Nakashima

26.   Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and Post-deposition annealing of a Hf/SiO2/Si structure
Materials Science in Semiconductor Processing , No. 9, pp. 1031-1036(2006)
Y. Sugimoto, H. Adachi, K. Yamamoto, D. Wang, H. Nakashima, H. Nakashima

25.   Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process
Nuclear Instruments and Methods in Physics Research, B 253, pp. 31-36(2006)
D. Wang, S. Ii, K. Ikeda, H. Nakashima, K. Matsumoto, M. Nakamae, H. Nakashima

24.   Photoluminescence Evaluation of Defects Generated during Temperature Ramp-up Process of SiGe-On-Insulator Virtual Substrate Fabrication
Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006),Part 3 of 3, pp. 2193-2195(2006)
D. Wang, S. Ii, K. Ikeda, H. Nakashima, H. Nakashima

23.   Photoluminescience evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process
Appl. Phys. Lett., Vol.89, No.4, pp.041916-1-3(2006)
D. Wang, S. Ii, and H. Nakashima, K. Ikeda and H. Nakashima, K. Matsumoto and M. Nakamae

22.   Photoluminescence Characterization of Strained Si-SiGe-on-Insulator Wafers
Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3012-3016(2006)
D. Wang, K. Matsumoto, M. Nakamae and H. Nakashima

21.   Structural and electrical evaluation for strained Si/SiGe on insulator
Thin Solid Films, Vol. 508, pp. 107-111(2006)
D. Wang, S. Ii, K. Ikeda, H. Nakashima, M. Ninomiya, M. Nakamae and H. Nakashima

20.   Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication
Jpn. J. Appl. Phys., Vol. 45, No. 4A, pp. 2643-2647(2006)
T. Terakawa, D. Wang, and H. Nakashima

19.   Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements
Physica B, Vol. 376-377, pp. 411-415(2006)
D. Wang, A. Ueda, H. Takada, H. Nakashima

18.   Fe gettering by p+ layer in bifacial Si solar cell fabrication
Physica B, Vol. 376-377, pp. 231-235(2006)
T. Terakawa, D. Wang, H. Nakashima

17.    高効率両面受光太陽電池製造におけるp+層とn+層のFeゲッタリング能力評価
九州大学大学院総合理工学報告, 第27巻, 第4号, pp. 345-349(2006)
寺川 武士, 王 冬, 中島 寛

16.   Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions
Appl. Phys. Lett., Vol. 87, No. 25, pp. 251928-1-3(2005)
D. Wang, K. Matsumoto, M. Nakamae and H. Nakashima

15.    Photoluminescence Characterization of Strained Si-SiGe-on-Insulator wafers
Extended Abstracts of the 2005 International Conference on Solid State Devices And Materials, Kobe, pp. 576-577(2005)
D. Wang, K. Matsumoto, M. Nakamae and H. Nakashima

14.    Fe gettering by p+ layer in bifacial Si solar cell fabrication
The 23rd International Conference on Defects in Semiconductors, Abstract p. 368(2005)
T. Terakawa, D. Wang and H. Nakashima

13.    Electrical characterization of thin SOI wafers using lateral-MOS transient capacitance measurements
The 23rd International Conference on Defects in Semiconductors, Abstract p. 281(2005)
D. Wang, A. Ueda, H. Takada and H. Nakashima

12.   Fe Gettering for High-Efficiency Solar Cell Fabrication
Jpn. J. Appl. Phys., Vol. 44, No. 6A, pp. 4060-4061(2005)
T. Terakawa, D. Wang, and H. Nakashima

11.   Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering
Appl. Phys. A (Materials Science & Processing) Vol. 80, No. 8, pp. 1781-1787(2005)
J. Wang, L. Zhao, N. H. Luu, D. Wang and H. Nakashima

10.   Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2390-2394(2005)
D. Wang, M. Ninomiya, M. Nakamae, H. Nakashima

9.   Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements
Appl. Phys. Lett., Vol. 86, No. 12, pp. 122111-1-3(2005)
D. Wang, M. Ninomiya, M. Nakamae, H. Nakashima

8.   Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Mesurements
The 4thInternational Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium, Abstracts), pp. 365-369(2004)
H. Nakashima, D. Wang, M. Ninomiya, M. Nakamae

7.   Evaluation of Interface States and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
2004 the 7thInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, pp. 2148-2150
D. Wang, M. Ninomiya, M. Nakamae and H. Nakashima

6.   Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Mesurements
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, pp. 526-527(2004)
D. Wang, M. Ninomiya, M. Nakamae and H. Nakashima

5.   Optimization of Ar-diluted N2 electron cyclotron resonance plasma for high-quality SiN film growth at low temperature
Engineering Sciences Reports, Kyushu University(九州大学大学院総合理工学報告)(KYUSHU DAIGAKU SOGORIKOGAKU HOKOKU) Vol. 26, No. 1, pp. 1-8(2004)
N. H. Luu, L. Zhao, D. Wang, Y. Sugimoto, K. Ikeda,H. Nakashima and H. Nakashima

4.   Method for Detecting in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
Jpn. J. Appl. Phys., Vol. 43, No. 5A, pp. 2402-2408(2004)
H. Nakashima, D. Wang, T. Noguchi, K. Itani, J. Wang and L. Zhao

3.   Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
Jpn. J. Appl. Phys., Vol. 43, No. 1A/B, pp. L 47-L 49(2004)
L. Zhao, N. H. Luu, D. Wang, Y. Sugimoto, K. Ikeda, H. Nakashima and H. Nakashima

2.   Evaluation and control of electrically active defect in strained-silicon wafer
Proceedings of the Forum on the Science and Technology of Silicon Materials 2003,pp. 293-298(2003)
H. Nakashima, D. Wang, K. Itani, M. Ninomiya and M. Nakamae

1.   Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance
Jpn. J. Appl. Phys., Vol. 42, No. 10, pp. 6496-6501(2003)
J. L. Wang, L. Zhao, N. H. Luu, K. Makiyama, D. Wang and H. Nakashima

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