研究成果
令和5(2023)年
受賞
令和4年度 総合理工学府賞 那須 新悟
論文・国際学会proceedings
252. Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), pp. 249-250
L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
251. Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), pp. 525-526
R. Loo, A. Hikavyy, D. Wang, K. Yamamoto, T. Sipőcz, Á. Kerekes, A. Akula, and Y. Shimura
250. High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), pp. 873-874
T. Koga, T. Nagano, K. Moto, K. Yamamoto, and T. Sadoh
249. Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), pp. 533-534
K. Moto, K. Toko, T. Takayama, T. Ishiyama, K. Yamamoto
248. Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain
Materials Science in Semiconductor Processing, Vol. 167, No. 15, 107763 (2023)
K. Yamamoto, T. Matsuo, M. Yamada, Y. Wagatsuma, K. Sawano, K. Hamaya LINK
247. Fabrication and Characterization of Germanium n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator: Formation of underlying Germanium Oxide and Its Electrical Characteristics
Materials Science in Semiconductor Processing, Vol. 162, No. 1, 107504 (2023)
W.-C. Wen, D. Wang, H. Nakashima, K. Yamamoto LINK
学会発表
Llinyu huang, Kenta Moto, Takamitsu Ishiyama, Kaoru Toko, Dong Wang, Keisuke Yamamoto
Fabrication of Inversion Mode n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge
2023年第84回応用物理学会秋季学術講演会, 2023.9.20
鍬釣 一、王 冬、山本 圭介
リセスチャネル化によるメタルS/D 型Ge n-MOSFET の電流駆動力向上(III)
2023年第84回応用物理学会秋季学術講演会, 2023.9.20
L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization
2023 International Conference on Solid State Device and Materials (SSDM 2023)
2023.9.8
K. Moto, K. Toko, T. Takayama, T. Ishiyama, and K. Yamamoto
Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition
2023 International Conference on Solid State Device and Materials (SSDM 2023)
2023.9.7
K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw
Evaluation of the physical properties of Ge-on-insulator based on Ge-on-Nothing and layer transfer
International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023), 2023.5.25
K. Moto, K. Toko, T. Takayama, T. Ishiyama, and K. Yamamoto
Control of Schottky Barrier Height at Metal/Polycrystalline Ge Interfaces with Fermi-Level Pinning Alleviation
International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023), 2023.5.24
N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang
N-type characteristics of undoped Ge0.967Sn0.033 fabricated on bulk n-Ge
International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023), 2023.5.22
H. Kuwazuru, S. Nasu, D. Wang, and K. Yamamoto
Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.24
L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.24
K. Moto, K. Yamamoto, and K. Toko
Polycrystalline Thin-Film Transistor Based on Solid-Phase Crystallized Ge and GeSn
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.23
N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang
N-type characteristics of undoped GeSn in the low Sn concentration region
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.23
K. Yamamoto(Invited), D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw
Ge-on-Insulator from Ge-on-Nothing and Layer Transfer
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.23
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