Publication

This page includes Japanese contents.

2023

Award

FY2022 IGSES School award, Shingo NASU

Papars, proceedings

247. Fabrication and Characterization of Germanium n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator: Formation of underlying Germanium Oxide and Its Electrical Characteristics
Materials Science in Semiconductor Processing, Vol. 162, No. 1, 107504 (2023)
W.-C. Wen, D. Wang, H. Nakashima, K. Yamamoto LINK

Conference presentations

H. Kuwazuru, S. Nasu, D. Wang, and K. Yamamoto
Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.24

L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.24

K. Moto, K. Yamamoto, and K. Toko
Polycrystalline Thin-Film Transistor Based on Solid-Phase Crystallized Ge and GeSn
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.23

N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang
N-type characteristics of undoped GeSn in the low Sn concentration region
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.23

K. Yamamoto(Invited), D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw
Ge-on-Insulator from Ge-on-Nothing and Layer Transfer
13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.1.23