Functional Device Engineering Laboratory / Kyushu University

Publication

This page includes Japanese contents.

2024

Award

2024 International Conference on Solid State devices and Materials(SSDM2024) Young Researcher Award Linyu Huang PHOTO

Papars, proceedings

11. Al₂O₃ growth on Ge by low-temperature (~90 ºC) atomic layer deposition and its application for MOS devices
Materials Science in Semiconductor Processing, Vol. 190, No. 5, 109372 (2025)
T. Aso, H. Kuwazuru, D. Wang, K. Yamamoto LINK

10. Effect of Channel Shape on the Electrical Performance of n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (SSDM2024), pp. 493-494
L. Huang, A. Morimoto, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

9. Demonstration of CMOS Inverter on Polycrystalline Ge Formed by Solid-phase Crystallization
2024 International Conference on Solid State Device and Materials (SSDM 2024), pp. 479-480
A. Morimoto, L. Huang, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

8. Performance Enhancement of 3C-SiC n-MOSFET by Channel Structure Improvement and Forming Gas Annealing for a Gate Stack
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (SSDM2024), pp. 727-728
R. Nishizaki, D. Wang, K. Yamamoto, H. Uratani, Y. Sakaida, S. Hishiki

7. Germanium Gate Stack Fabrication at Low Temperature using Nonheated Atomic Layer Deposution
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (SSDM2024), pp. 585-586
T. Aso, H. kuwazuru, D. Wang, and K. Yamamoto

6. Low-temperature annealing effect on electrical/structural characteristics or SiO₂/GeO₂/Ge gate stack
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (SSDM2024), pp. 35-36
H. Kuwazuru, T. Aso, D. Wang, and K. Yamamoto

5. Study of the Dependence of Effective Barrier Height on Thickness of HfO₂,SiO₂,Y₂O₃,and Al₂O₃ Films in Metal-Ultra-Thin-Insulator-Germanium Structures
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (SSDM2024), pp. 505-506
Y. Feng, N. Shimizu, K. Yamamoto, and D. Wang

4. Low Temperature (210 °C) Fabrication of Ge MOS Capacitor and Controllability of Its Flatband Voltage
Materials Science in Semiconductor Processing, Vol. 178, No. 1, 108427 (2024)
H. Kuwazuru, T. Aso, D. Wang, K. Yamamoto LINK

3. Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback method
ECS Journal of Solid State Science and Technology, Vol. 63, No. 4, 044001 (2024)
N. Shimizu, D. Wang, H. Nakashima, K. Yamamoto LINK

2. "Spotlights 2024" Ge-on-insulator fabrication based on Ge-on-nothing technology
Japanese Journal of Applied Physics, Vol. 63, No. 4, 04SP32 (2024)
K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, V. Depauw LINK

1. Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization
Japanese Journal of Applied Physics, Vol. 63, No. 2, 02SP42 (2024)
L. Huang, K. Moto, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto LINK

Conference presentations

鍬釣一、麻生大聖、王冬、山本圭介
Ge上ゲートスタックの低温熱処理効果
2024年第72回応用物理学会春季学術講演会, 2025.3.17

黒枝元哉、馮亜軍、山本圭介、王冬
Ge-MIS型発光素子に向けた極薄絶縁膜の作製と評価
2024 年(令和6年度) 応用物理学会九州支部学術講演会, 2024.12.7

髙田康之介、鍬釣一、麻生大聖、王冬、山本圭介
Ge-on-Nothing構造を用いた(111)面 Ge-on-Insulatorの作製
2024 年(令和6年度) 応用物理学会九州支部学術講演会, 2024.12.7

R. Nishizaki, D. Wang, and K. Yamamoto
High Performance 3C-SiC n-MOSFET with Optimized Channel Structure and Forming Gas Annealing Effect
15th International Workshop on New Group IV Semiconductor Nanoelectronics, 2024.10.22

T. Aso, H. Kuwazuru, D. Wang, and K. Yamamoto
Nonheated Atomic Layer Deposition for Germanium Gate Stack
15th International Workshop on New Group IV Semiconductor Nanoelectronics, 2024.10.22

A. Morimoto, L. Huang, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Fabrication of CMOS Inverter on Polycrystalline Ge Formed by Solid phase Crystallization on Glass Substarate
15th International Workshop on New Group IV Semiconductor Nanoelectronics, 2024.10.21

Y. Feng, N. Shimizu, K. Yamamoto, and D. Wang
The Dependence of Effective Barrier Height on Thickness of Various Oxide Fiims in Metal Insulator Germanium Structures
15th International Workshop on New Group IV Semiconductor Nanoelectronics, 2024.10.21

H. Kuwazuru, T. Aso, D. Wang, and K. Yamamoto
Low temperature fabrication of SiO₂/GeO₂/Ge gate stack and its electrical/structural analysis
15th International Workshop on New Group IV Semiconductor Nanoelectronics, 2024.10.21

K. Yamamoto(invited), N. Shimizu, D. Wang, H. Nakashima, R. Roo, C. Porret, J. Cho, K. Dessein, and V. Depauw
Comparative Study of GOI Fabrication Methods for High Electrical Properties
15th International Workshop on New Group IV Semiconductor Nanoelectronics, 2024.10.21

野田浩矢、古賀万尋、内藤陽太、山本圭介、篠原正典、鷹林将
窒素ナノドープダイヤモンドライクカーボン薄膜の合成と電気特性
2024年第85回応用物理学会秋季学術講演会, 2024.9.19

鍬釣一、麻生大聖、王冬、山本圭介
Ge上ゲートスタックの低温(210℃)形成と界面ダイポール解析
2024年第85回応用物理学会秋季学術講演会, 2024.9.19

麻生大聖、鍬釣一、王冬、山本圭介
非加熱ALD法を用いたGe上へのゲートスタック低温形成
2024年第85回応用物理学会秋季学術講演会, 2024.9.19

森本敦己、黄林昱、居倉功汰、石山隆光、都甲薫、王冬、山本圭介
ガラス基板上多結晶Ge薄膜へのCMOSインバータの形成
2024年第85回応用物理学会秋季学術講演会, 2024.9.16

L. Huang, A. Morimoto, K. Igura, T. Ishiyama, K. Toko, D. Wang and K. Yamamoto
Performance Improvement of n-channel TFT on Solid-Phase Crystallized poly-Ge by Channel Width Shrinking
2024年第85回応用物理学会秋季学術講演会, 2024.9.16

L. Huang, A. Morimoto, K. Igura, T. Ishiyama, K. Toko, D. Wang and K. Yamamoto
Effect of Channel Shape on the Electrical Performance of n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge
2024 International Conference on Solid State Device and Materials (SSDM 2024),2024.9.4

A. Morimoto, L. Huang, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto
Demonstration of CMOS Inverter on Polycrystalline Ge Formed by Solid-phase Crystallization
2024 International Conference on Solid State Device and Materials (SSDM 2024),2024.9.4

R. Nishizaki, D. Wang, K. Yamamoto, H. Uratani, Y. Sakaida, S. Hishiki
Performance Enhancement of 3C-SiC n-MOSFET by Channel Structure Improvement and Forming Gas Annealing for a Gate Stack
2024 International Conference on Solid State Device and Materials (SSDM 2024),2024.9.3

T. Aso, H. kuwazuru, D. Wang and K. Yamamoto
Germanium Gate Stack Fabrication at Low Temperature using Nonheated Atomic Layer Deposution
2024 International Conference on Solid State Device and Materials (SSDM 2024),2024.9.3

H. Kuwazuru, T. Aso, D. Wang and K. Yamamoto
Low-temperature annealing effect on electrical/structural characteristics or SiO₂/GeO₂/Ge gate stack
2024 International Conference on Solid State Device and Materials (SSDM 2024),2024.9.3