This page includes Japanese contents.


Papars, proceedings

4.    Low Temperature (210 °C) Fabrication of Ge MOS Capacitor and Controllability of Its Flatband Voltage
Materials Science in Semiconductor Processing, Vol. 178, No. 1, 108427 (2024)
H. Kuwazuru, T. Aso, D. Wang, K. Yamamoto LINK

3.    Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback method
ECS Journal of Solid State Science and Technology, Vol. 63, No. 4, 044001 (2024)
N. Shimizu, D. Wang, H. Nakashima, K. Yamamoto LINK

2.   "Spotlights 2024" Ge-on-insulator fabrication based on Ge-on-nothing technology
Japanese Journal of Applied Physics, Vol. 63, No. 4, 04SP32 (2024)
K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, V. Depauw LINK

1.    Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization
Japanese Journal of Applied Physics, Vol. 63, No. 2, 02SP42 (2024)
L. Huang, K. Moto, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto LINK