Publication

This page includes Japanese contents.

2020

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令和元年度 総合理工学府量子プロセス理工学専攻 専攻賞 岡 龍誠

Papars, proceedings

240. (Invited)Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy
ECS transactions, Vol. 98, No. 5, pp. 395-404(2020)
H. Nakashima, Wei-Chen Wen, K. Yamamoto, D. Wang LINK

239. Sn doping effects in solid-phase crystallized Ge thin-film transistors
ECS transactions, Vol. 98 K. Moto, K. Yamamoto, T. Suemasu, H. Nakashima, K. Toko, to be published

238. Underlayer selection to improve the performance of polycrystalline Ge thin film transistors
ECS transactions, Vol. 98, No. 5, pp. 423-427(2020)
T. Imajo, K. Moto, K. Yamamoto, T. Suemasu, H. Nakashima, K. Toko LINK

237. Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM2020), pp. 33-34
H. Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

236. Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET
AIP advances, Vol. 10, p. 065119 (2020)
W.-C. Wen, Y. Nagatomi, H. Akamine, K. Yamamoto, D. Wang, H. Nakashima LINK

235. Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene
ACS NANO, in press (2020)
P. Solís-Fernández, Y. Terao, K. Kawahara, W. Nishiyama, T. Uwanno, Y.-C. Lin, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, K. Suenaga, H. Ago LINK

234. High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis
Jpn. J. Appl. Phys., Vol. 59, p. SGGD17 (2020)
R. Oka, K. Yamamoto, H. Akamine, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura LINK

Conference presentations

H. Nakashima(invited), W.-C. Wen, K. Yamamoto, D. Wang
Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy
PRiME2020 (online), 2020.October

K. Moto, K. Yamamoto, T. Suemasu, H. Nakashima, K. Toko
Sn Doping Effects in Solid-Phase Crystallized Ge Thin-Film Transistors
PRiME2020 (online), 2020.October

T. Imajo, K. Moto, K. Yamamoto, T. Suemasu, H. Nakashima, K. Toko
Underlayer Selection to Improve the Performance of Polycrystalline Ge Thin Film Transistors
PRiME2020 (online), 2020.October

N. Shimizu, K. Yamamoto, D. Wang, H. Nakashima
Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication
PRiME2020 (online), 2020.October

H. Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities
2020 International Conference on Solid State Devices and Materials (SSDM2020)
2020.9.29