Publication

This page includes Japanese contents.

2016

Award

第20回 (2016年) 応用物理学会九州支部 発表奨励賞 本山 千里 PHOTO

第77回 応用物理学会秋季学術講演会 講演奨励賞 永冨 雄太, 岡本 隼人 PHOTO

第8回 半導体材料・デバイスフォーラム 口頭発表最優秀賞 岡本 隼人 PHOTO

平成27年度 総合理工学府 学府賞 前蔵 貴行 PHOTO

Papars, proceedings

214. Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials (SSDM2016), pp. 643-642(2016)
H. Okamoto, K. Yamamoto, D. Wang, and H. Nakashima

213. Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using embedded TiN-source/drain structure
Semiconductor Science and Technology Vol. 32, pp. 035001 1-8(2017)
Y. Nagatomi, T. Tateyama, S. Tanaka, K. Yamamoto, D. Wang, and H. Nakashima LINK

212. Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
Materials Science in Semiconductor Processing Vol. 70, pp. 260-264(2017)
T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, and K. Hamaya LINK

211. Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack
Materials Science in Semiconductor Processing Vol. 70, pp. 246-253(2017)
Y. Nagatomi, T. Tateyama, S. Tanaka, W.-C. Wen, T. Sakaguchi, K. Yamamoto, L. Zhao, D. Wang, and H. Nakashima LINK

210. Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction
Materials Science in Semiconductor Processing Vol. 70, pp. 283-287(2017)
K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima LINK

209. Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates
Materials Science in Semiconductor Processing Vol. 70, pp. 68-72(2017)
K. Kasahara, H. Higashi, M. Nakano, Y. Nagatomi, K. Yamamoto, H. Nakashima, and K. Hamaya LINK

208. A low-temerature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes
Jpn. J. Appl. Phys., Vol. 55, No.06, pp. 063001-1-4(2016)
Y. Fujita, M. Yamada, Y. Nagatomi, K. Yamamoto, S. Yamada, K. Sawano, T. Kanashima, H. Nakashima, and K. Hamaya LINK

207. Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure
Thin Solid Films Vol. 602, pp. 43-47(2016)
D. Wang, T. Maekura, K. Yamamoto, and H. Nakashima LINK

206. Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes
Jpn. J. Appl. Phys., Vol. 55, No. 4S, pp. 04EH08-1-6(2016)
T. Maekura, K. Yamamoto, H. Nakashima, and D. Wang LINK

Conference presentations

田中 健太郎, 前蔵 貴行, 本山 千里, 王 冬, 山本 圭介, 中島 寛
Ge 光素子における基板キャリア密度と伝導型が及ぼす発光特性への影響
平成28(2016)年度応用物理学会九州支部学術講演会, 2016.12.4

坂口 大成, 建山 知輝, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛
ゲートスタック中へのAl 導入によるp-MOSFET の移動度向上機構
平成28(2016)年度応用物理学会九州支部学術講演会, 2016.12.3

板屋 航, 岡本 隼人, 山本 圭介, 王 冬, 中島 寛
反応性スパッタリングで形成したZrN 物性とGe とのコンタクト特性
平成28(2016)年度応用物理学会九州支部学術講演会, 2016.12.3

C. Motoyama, T. Maekura, K. Tanaka, D. Wang, K. Yamamoto, H. Nakashima
Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes
平成28(2016)年度応用物理学会九州支部学術講演会, 2016.12.3

W.-C. Wen, Y. Nagatomi, L. Zhao, K. Yamamoto, D. Wang, H. Nakashima
TOF-SIMS and XPS analyses for investigation of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation
平成28(2016)年度応用物理学会九州支部学術講演会, 2016.12.3

T. Tateyama, Y. Nagatomi, S. Tanaka, K. Yamamoto, D. Wang, H. Nakashima
Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN-source/drain structure
平成28(2016)年度応用物理学会九州支部学術講演会, 2016.12.3

H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang
Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer
JSPS Core-to Core Program "Atomically Controlled Processsing for Ultralarge Scale Integration", Juelich, Germany, 2016.11

H. Okamoto, K. Yamamoto, D. Wang, and H. Nakashima
Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer
2016 International Conference on Solid State Devices and Materiaals (SSDM2016), 2016.9.29.

H. Okamoto, K. Yamamoto, D. Wang, H. Nakashima
Fabrication of Low Resistivity Metal/Ge Contact with Amorphous Zr-Ge-N Interlayer
The 77th JSAP Autumn Meeting, 2016.9.16

Y. Nagatomi, T. Tateyama, T. Sakaguchi, K. Yamamoto, D. Wang, H. Nakashima
Creation and annihilation of interfacial dipoles in Al/SiO2/GeO2/Ge gate stacks
The 77th JSAP Autumn Meeting, 2016.9.15

H. Higashi, M. Nakano, K. Kudou, Y. Fujita, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, K. Hamaya
Demonstration of a flexible TFT with a crystalline Ge laVer
The 77th JSAP Autumn Meeting, 2016.9.15

K. Kasahara, H. Higashi, M. Nakano, Y. Nagatomi, K. Yamamoto, H. Nakashima, and K. Hamaya
Effect of Post Annealing on Hole mobility of Pseudo-Single-Crystalline Germanium Thin-Film-Transistors on Glass Substrates
7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.6.11

T. Kanashima, M. Zenitaka, K. Yamamoto, R. Yamashiro, H. Nohira, H. Nakashima, S. Yamada, and K. Hamaya
Improvement of C-V Characteristics in LaYO3/La2O3/Ge (111) MIS Structures
7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.6.11

K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
Characterization of Ge Tunnel FET with Metal/Ge Junction
7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.6.9

Y. Nagatomi, S. Tanaka, T. Tateyama, K. Yamamoto, D. Wang, and H. Nakashima
Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2gate stacks
7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.6.8

山本 圭介、岡本 隼人、王 冬、中島 寛
金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価
2016年第63回応用物理学会春季学術講演会, 2016.3.20

永冨 雄太、田中 慎太郎、建山 知輝、山本 圭介、王 冬、中島 寛
ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上
2016年第63回応用物理学会春季学術講演会, 2016.3.20

金島 岳、銭高 真人、山本 圭介、山城 陸、只野 純平、野平 博司、中島 寛、山田 晋也、浜屋 宏平
La2xA2(1-x)O3(A=Lu, Y)/La2O3/Ge(111) MIS構造におけるC-V特性の改善
2016年第63回応用物理学会春季学術講演会, 2016.3.20

建山 知輝、永冨 雄太、田中 慎太郎、山本 圭介、王 冬、中島 寛
メタルS/D型Ge n-MOSFETの寄生抵抗低減
2016年第63回応用物理学会春季学術講演会, 2016.3.19

T. Maekura, C. Motoyama, K. Yamamoto, H. Nakashima, and D. Wang
Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes
9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2016.1.12

Y. Nagatomi, S. Tanaka, T. Tateyama, K. Yamamoto, D. Wang, and H. Nakashima
Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks
9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2016.1.11

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