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ŽR–{ Œ\‰îAŒõŒ´ ¹ŽõA‰¤ “~A’†“‡ Š°
‘JˆÚ‹à‘®’‚‰»•¨‚ð—p‚¢‚½‹à‘®/GeƒRƒ“ƒ^ƒNƒg‚̏á•Ç§Œä
2018”N‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, 2018.3.18

ŒÃ‘‘ m‹v, ‚ŽR ‹±ˆê, ŽR–{ Œ\‰î, ’†“‡ Š°, –약 ”ŽŽi, ‹à“‡ Šx
—n‰tˆ—‚É‚æ‚錋»Lu-doped La2O3/La2O3/Ge(111)MISŠE–Ê“Á«‰ü‘P
2018”N‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, 2018.3.17

W.-C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang and H. Nakashima
Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation
2018”N‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï, 2018.3.17

H. Nakashima, W.-C. Wen, K. Yamamoto and D. Wang
Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks
11th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.2.23

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