研究成果

平成27(2015)年

受賞

第7回 半導体材料・デバイスフォーラム ポスター発表最優秀奨励賞 建山 知輝 PHOTO

平成26年度 量子プロセス理工学専攻 専攻賞 長岡 裕一

論文・国際学会proceedings

205. Electrical properties of pseudo-single-crystalline germanium thin-film-transistor fabricated on glass substrates
Appl. Phys. Lett., Vol. 107, No. 14, pp. 142102-1-5(2015)
K. Kasahara, Y. Nagatomi, K. Yamamoto, H. Higashi, M. Nakano, S. Yamada, D. Wang, H. Nakashima, and K. Hamaya LINK

204. Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices
The Electrochemical Society Transactions Vol. 69, No. 10, pp. 55-66(2015)
H. Nakashima, K. Yamamoto, and D. Wang LINK

203. PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance
Extended Abstracts of the 2015 International Conference on Solid State Devices and　Materials (SSDM2015), pp. 28-29(2015)
S. Tanaka, Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima

202. Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/MetalDdiodes
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM2015) pp. 606-607(2015)
T. Maekura, D. Wang, K. Yamamoto, and H. Nakashima

201. Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge
J. Appl. Phys., Vol. 118, No. 11, pp. 115701-1-12(2015)
K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima LINK

200. Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs
Jpn. J. Appl. Phys., Vol. 54, No. 7, pp. 070306-1-4(2015)
Y. Nagatomi, S. Tanaka, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima LINK

199. Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure
Appl. Phys. Lett., Vol. 106, No. 7, pp. 071102-1-4(2015)
D. Wang, T. Maekura, S. Kamezawa, K. Yamamoto, and H. Nakashima LINK

学会発表

H. Nakashima(Invited), K. Yamamoto, and D. Wang
Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices
The 2nd International Conference & Exhibition for Nanopia, 2015.11.12

D. Wang(Invited), T. Maekura, K. Yamamoto, and H. Nakashima
Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes
American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10.24

H. Nakashima(Keynote), K. Yamamoto, and D. Wang
Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation
American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10.24

H. Nakashima(Invited), K. Yamamoto, and D. Wang
Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices
228th ECS Meeting, 2015.10.12.

S. Tanaka, Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance
2015 International Conference on Solid State Devices and Materiaals (SSDM2015), 2015.9.29.

T. Maekura, D. Wang, K. Yamamoto, and H. Nakashima
Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes
2015 International Conference on Solid State Devices and Materiaals (SSDM2015), 2015.9.29.

永冨 雄太, 田中 慎太郎, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛
低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用
シリコン材料・デバイス研究会, 2015.6.19.

D. Wang, T. Maekura, K. Yamamoto, and H. Nakashima
Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure
9th Int. Conf. on Si Epitaxy and Heterostructures, 2015.5.20.

K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers
9th Int. Conf. on Si Epitaxy and Heterostructures, 2015.5.19.

H. Nakashima(Invited), K. Yamamoto, D. Wang, M. Mitsuhara, R. Noguchi, K. Hiidome, and M. Nishida
Contact Formation for Metal Source/Drain Ge-CMOS
9th Int. Conf. on Si Epitaxy and Heterostructures, 2015.5.19.

永冨 雄太, 長岡 裕一, 田中 慎太郎, 山本 圭介, 王 冬, 中島 寛
ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御
2015年第62回応用物理学会春季学術講演会, 2015.3.14.

米田 亮太, 山本 圭介, 中島 寛
nウェルの形成のためのGe基板上へのSb拡散
2015年第62回応用物理学会春季学術講演会, 2015.3.14.

笠原 健司, 永冨 雄太, 山本 圭介, 東 英実, 中野 茉莉央, 山田 晋也, 金島 岳, 中島 寛, 浜屋 宏平
300℃以下プロセスで作製した結晶性GeチャネルTFT
2015年第62回応用物理学会春季学術講演会, 2015.3.11.

前蔵 貴行, 山本 圭介, 王 冬, 中島 寛
非対称-金属/Ge/金属構造を有する光素子の試作と特性評価
2015年第62回応用物理学会春季学術講演会, 2015.3.11.

Y. Nagatomi, Y. Nagaoka, S. Tanaka, K. Yamamoto, D. Wang, and H. Nakashima
Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack
8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2015.1.30.

K. Yamamoto(Invited), R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers
8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2015.1.29.

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