研究成果

2000年代

論文・国際学会proceedings

155. Defect-Induced Deep Levels in SiGe-On-Insulator Substrate Fabricated using Ge Condensation Technique
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), Sendai, pp. 396-397 (2009)
H. Yang, D. Wang, and H. Nakashima

154. Optical and Electrical Characterization of Defects in SiGe-on-Insulator
The Electrochemical Society Transactions Vol. 25, No.7, pp. 99-114 (2009)
H. Nakashima, D. Wang, and H. Yang

153. Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique
Appl. Phys. Lett., Vol. 95, No. 12, pp. 122103-1-3 (2009)
H. Yang, D. Wang, and H. Nakashima

152. Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation
Solid-State Electronics, Vol. 53, No. 8, pp. 841-849 (2009)
D. Wang and H. Nakashima

151. Electrical and structural evaluations of high-k gate dielectrics fabricacated using plasma oxidation and the subsequent annealing for a Hf/SiO2/Si structure
Semicond. Sci. Technol., Vol. 23, No. 12, pp. 125020-1-6 (2008)
H. Nakashima, D. Wang, Y. Sugimoto, Y. Suehiro, K. Yamamoto, M. Kajiwara and K. Hirayama

150. Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure
Proceeding of 9th International Conference on Solid-State and Integrated-CircuitTechnology (ICSICT2008), C5.7 / pp. 1- 4. (2008)
H. Nakashima, Y. Sugimoto, Y. Suehiro, K. Yamamoto, M. Kajiwara, K. Hirayama, D. Wang

149. Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation
Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008),C4.6 / pp. 1-4. (2008)
D. Wang, H. Yang, J. Morioka, T. Kitamura, H. Nakashima

148. Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal
Thin Solid Films, Vol. 517, No. 1, pp. 204-206 (2008)
Y. Sugimoto, K. Yamamoto, M. Kajiwara, Y. Suehiro, D. Wang, and H. Nakashima

147. Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer: wafer ramping process
Thin Solid Films, Vol. 517, No. 1, pp. 38-40 (2008)
S. Ii, Y. Takaki, K. Ikeda, H. Nakashima, and H. Nakashima

146. Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence
Thin Solid Films, Vol. 517, No. 1, pp. 31-33 (2008)
D. Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, and T. Kitamura

145. Electrical and Structural Evaluations of Ultrathin SiGe-and Ge-on-insulator Fabricated Using Ge Condensation by Dry Oxidation
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM2008), Tsukuba, pp. 438-439 (2008)
H. Yang, D. Wang, H. Gao, K. Hirayama, K. Ikeda, S. Hata, H. Nakashima, H. Nakashima

144. Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator
Appl. Phys. Lett., Vol. 93, No. 7, pp. 072104-1-3 (2008)
H. Yang, D. Wang, H. Nakashima, H. Gao, K. Hirayama, K. Ikeda, S. Hata, and H. Nakashima

143. Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge Condensation by dry oxidation (Invited)
4thInternational SiGe Technology and Device Meeting (ISTDM2008), Abstract, pp. 125-126(2008)
H. Nakashima and D. Wang

142. Direct Evidence of Polycrystalline Sillicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation
Japan Institute of Metals,Mater. Tran., Vol. 49, No. 4, pp. 723-727(2008)
S. Ii, T. Hirota, K. Fujimoto, Y. Sugimoto, N. Takata, K. Ikeda, H. Nakashima and H. Nakashima

141. Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition
Appl. Phys. Lett., Vol. 91, No. 24, pp. 241918-1-3(2007)
D. Wang, H. Nakashima, J. Morioka and T. Kitamura

140. Effective work function modulation of TaN metal gate on HfO2after postmetallization annealing
Appl. Phys. Lett., Vol. 91, No. 11, pp. 112105-1-3(2007)
Y. Sugimoto, M. Kajiwara, K. Yamamoto, Y. Suehiro, D. Wang and H. Nakashima

139. Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence,
5th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, Marseille, pp. 26-27(2007)
D. Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, and T. Kitamura

138. Dependences of effective work functions of TaN on HfO2 and SiO2on post-metallization anneal,
5th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, Marseille,pp. 194-195(2007)
Y. Sugimoto, K. Yamamoto, M. Kajiwara, Y. Suehiro, D. Wang, and H. Nakashima

137. Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer: wafer ramping process,
5th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, Marseille, pp. 32-33(2007)
S. Ii, Y. Takaki, K. Ikeda, H. Nakashima, and H. Nakashima

136. TaN/Hf系high-k /Siゲートスタック構造の電気特性
九州大学大学院総合理工学報告,第29巻,第4号,pp. 371-378(2007)
杉本 陽平, 山本 圭介, 梶原 誠生, 末廣 雄策, 中島 寛

135. Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH4OH/H2O2 Solution and Hf Metal Hard Mask
Jpn. J. Appl. Phys., Vol. 46, No. 9, pp. L211-L214(2007)
Y. Sugimoto, K. Yamamoto, and H. Nakashima

134. Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and Post-deposition annealing of a Hf/SiO2/Si structure
Materials Science in Semiconductor Processing , No. 9, pp. 1031-1036(2006)
Y. Sugimoto, H. Adachi, K. Yamamoto, D. Wang, H. Nakashima, H. Nakashima

133. Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process
Nuclear Instruments and Methods in Physics Research, B 253, pp. 31-36(2006)
D. Wang, S. Ii, K. Ikeda, H. Nakashima, K. Matsumoto, M. Nakamae, H. Nakashima

132. AIC法により作製される多結晶Si薄膜形成過程のその場観察
Annual Reports HVEM LAB., Kyushu Univ., No. 30, pp. 73-74(九州大学超高圧電顕室研究報告)(2006)
池田 賢一, 廣田 健, 藤本 健資, 杉本陽平, 高田 尚紀, 井 誠一郎, 中島 英治, 中島 寛

131. Photoluminescence Evaluation of Defects Generated during Temperature Ramp-up Process of SiGe-On-Insulator Virtual Substrate Fabrication
Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006),Part 3 of 3, pp. 2193-2195(2006)
D. Wang, S. Ii, K. Ikeda, H. Nakashima, H. Nakashima

130. Development of Strained Si-SiGe-on-Insulator Wafers for High Speed ULSI
Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006),Part 1 of 3, pp. 100-103(2006)
H. Nakashima, M. Miyao, M. Nakamae, T. Asano

129. Transmission electron microscopy studies of misfit dislocation structure of Si/SiGe interface in SGOI wafer
Proceeding of 16th International Microscopy Congress, p.1469(2006)
S. Ii, K. Ikeda, H. Nakashima, K. Matsumoto, M. Nakamae and H. Nakashima

128. Photoluminescience evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process
Appl. Phys. Lett., Vol.89, No.4, pp.041916-1-3(2006)
D. Wang, S. Ii, and H. Nakashima, K. Ikeda and H. Nakashima, K. Matsumoto and M. Nakamae

127. AIC法により作成された多結晶シリコン薄膜形成過程
社団法人 電子情報通信学会 IEICE Technical Report, ED2006-3, SDM2006-3, OME2006-3(2006)
池田 賢一, 廣田 健, 藤本 健資, 杉本 陽平, 高田 尚記, 井 誠一郎, 中島 英治, 中島 寛

126. Photoluminescence Characterization of Strained Si-SiGe-on-Insulator Wafers
Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3012-3016(2006)
D. Wang, K. Matsumoto, M. Nakamae and H. Nakashima

125. Structural and electrical evaluation for strained Si/SiGe on insulator
Thin Solid Films, Vol. 508, pp. 107-111(2006)
D. Wang, S. Ii, K. Ikeda, H. Nakashima, M. Ninomiya, M. Nakamae and H. Nakashima

124. Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication
Jpn. J. Appl. Phys., Vol. 45, No. 4A, pp. 2643-2647(2006)
T. Terakawa, D. Wang, and H. Nakashima

123. Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements
Physica B, Vol. 376-377, pp. 411-415(2006)
D. Wang, A. Ueda, H. Takada, H. Nakashima

122. Fe gettering by p+ layer in bifacial Si solar cell fabrication
Physica B, Vol. 376-377, pp. 231-235(2006)
T. Terakawa, D. Wang, H. Nakashima

121. 高効率両面受光太陽電池製造におけるp+層とn+層のFeゲッタリング能力評価
九州大学大学院総合理工学報告, 第27巻, 第4号, pp. 345-349(2006)
寺川 武士, 王 冬, 中島 寛

120. Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions
Appl. Phys. Lett., Vol. 87, No. 25, pp. 251928-1-3(2005)
D. Wang, K. Matsumoto, M. Nakamae and H. Nakashima

119. Photoluminescence Characterization of Strained Si-SiGe-on-Insulator wafers
Extended Abstracts of the 2005 International Conference on Solid State Devices And Materials, Kobe, pp. 576-577(2005)
D. Wang, K. Matsumoto, M. Nakamae and H. Nakashima

118. Fe gettering by p+ layer in bifacial Si solar cell fabrication
The 23rd International Conference on Defects in Semiconductors, Abstract p. 368(2005)
T. Terakawa, D. Wang and H. Nakashima

117. Electrical characterization of thin SOI wafers using lateral-MOS transient capacitance measurements
The 23rd International Conference on Defects in Semiconductors, Abstract p. 281(2005)
D. Wang, A. Ueda, H. Takada and H. Nakashima

116. Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
Jpn. J. Appl. Phys., Vol. 44, No. 7A, pp. 4770-4775(2005)
Y. Sugimoto, N. Takata, T. Hirota, K. Ikeda, F. Yoshida,H. Nakashima,and H. Nakashima

115. Fe Gettering for High-Efficiency Solar Cell Fabrication
Jpn. J. Appl. Phys., Vol. 44, No. 6A, pp. 4060-4061(2005)
T. Terakawa, D. Wang, and H. Nakashima

114. Structural and Electrical Evaluation for Strained Si/SiGe on Insulator
4th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, pp. 78-79(2005)
M. Nakamae, and H. Nakashima

113. Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering
Appl. Phys. A (Materials Science & Processing) Vol. 80, No. 8, pp. 1781-1787(2005)
J. Wang, L. Zhao, N. H. Luu, D. Wang and H. Nakashima

112. Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2390-2394(2005)
D. Wang, M. Ninomiya, M. Nakamae, H. Nakashima

111. Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements
Appl. Phys. Lett., Vol. 86, No. 12, pp. 122111-1-3(2005)
D. Wang, M. Ninomiya, M. Nakamae, H. Nakashima

110. Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Mesurements
The 4thInternational Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium, Abstracts), pp. 365-369(2004)
H. Nakashima, D. Wang, M. Ninomiya, M. Nakamae

109. Evaluation of Interface States and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
2004 the 7thInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, pp. 2148-2150
D. Wang, M. Ninomiya, M. Nakamae and H. Nakashima

108. Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Mesurements
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, pp. 526-527(2004)
D. Wang, M. Ninomiya, M. Nakamae and H. Nakashima

107. Development of Strained Silicon Wafer for Next Generation ULSI
2004 Asia-Pacific Workshop on Fundamental and Application of Advanced Semicondutor Devices(2004)
H. Nakashima, M. Nakamae, M. Miyao, H. Okushi, T. Asano and H. Hagino

106. Optimization of Ar-diluted N2 electron cyclotron resonance plasma for high-quality SiN film growth at low temperature
Engineering Sciences Reports, Kyushu University(九州大学大学院総合理工学報告)(KYUSHU DAIGAKU SOGORIKOGAKU HOKOKU) Vol. 26, No. 1, pp. 1-8(2004)
N. H. Luu, L. Zhao, D. Wang, Y. Sugimoto, K. Ikeda,H. Nakashima and H. Nakashima

105. Method for Detecting in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
Jpn. J. Appl. Phys., Vol. 43, No. 5A, pp. 2402-2408(2004)
H. Nakashima, D. Wang, T. Noguchi, K. Itani, J. Wang and L. Zhao

104. Control of sizes and densities of nano catalysts for nanotube synthesis by plasma breaking method
Materials Science and Engineering B107, pp. 113-118(2004)
J.S. Gao, K. Umeda, K. Uchino, H. Nakashima and K. Muraoka

103. Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
Jpn. J. Appl. Phys., Vol. 43, No. 1A/B, pp. L 47-L 49(2004)
L. Zhao, N. H. Luu, D. Wang, Y. Sugimoto, K. Ikeda, H. Nakashima and H. Nakashima

102. Evaluation and control of electrically active defect in strained-silicon wafer
Proceedings of the Forum on the Science and Technology of Silicon Materials 2003,pp. 293-298(2003)
H. Nakashima, D. Wang, K. Itani, M. Ninomiya and M. Nakamae

101. Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition
Jpn. J. Appl. Phys., Vol. 42, No. 10, pp. 6614-6618(2003)
T. Yasuda, K. Fujita, H. Nakashima and T. Tsutsui

100. Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance
Jpn. J. Appl. Phys., Vol. 42, No. 10, pp. 6496-6501(2003)
J. L. Wang, L. Zhao, N. H. Luu, K. Makiyama, D. Wang and H. Nakashima

99. Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure
Jpn. J. Appl. Phys., Vol. 42, No. 9A, pp. 5397-5404(2003)
T. Joge, I. Araki, T. Uematsu, T. Warabisako, H. Nakashima and K. Matsukuma

98. Benefit of Flat Polymer Dielectric Surface Loading Organic Semiconductors in Field-Effect Transistors Prepared by the Electrode-Peeling Transfer
Jpn. J. Appl. Phys., Vol. 42, No. 8A, pp. L967-L969(2003)
T. Yasuda, K. Fujita, H. Nakashima and T. Tsutsui

97. Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma
Jpn. J. Appl. Phys., Vol. 42, No. 5B, pp. L511- L513(2003)
J. L. Wang, T. Saitou, Y. Sugimoto, D. Wang, L. Zhao, and H. Nakashima

96. Plasma breaking of thin films into nano-sized catalysts for carbon nanotube synthesis
Materials Science & Engineering A352, pp. 308-313(2003)
J. S. Gao, K. Umeda, K. Uchino, H. Nakashima and K. Muraoka

95. A Thermal Dynamical Boron Getter (pp+ Getter)in Fe-Contaminated Mass Production of the Boron diffusedn+pp+BSF Bifacial Silicon Solar Cells.
Proc. IEEE 29th Photovoltaic Specialist Conference, p. 254(2002)
T. Joge, I. Araki, T. Uematsu, H. Nakashima and K. Matsukuma

94. 電子サイクロトロンプラズマを活用したシリコン薄膜及び極薄シリコン酸化膜の形成とその電気的評価
真空, Vol. 45, No.10, pp. 13-18(2002)
中島 寛

93. Electrical Properties of Low-Temperature Epitaxial Doped Si Thin Films Fabricated by Using a Sputtering-Type Electron Cyclotron Resonance Plasma
J. Phys. D: appl. Phys., Vol. 34, pp. 1025-1031(2001)
J. L. Wang, H. Nakashima, J. S. Gao, and K. Muraoka

92. Electrical Characteristics of p-n Junction Diodes Fabricated by Si Epitaxy at Low Temperature Using Sputtering-Type Electron Cyclotron Resonance Plasma J. Vac. Sci. and Tech. B, Vol. 19 No. 2, pp. 333-336(2001)
J. L. Wang, H. Nakashima, J. S. Gao, K. Iwanaga, K. Furukawa, K. Muraoka and Y. Sung

91. ECR Plasma Oxidation: Dependence on Energy of Argon Ion
Mater. Res. Soc. Symp. Proc., Vol. 585, pp. 171-176(2001)
S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao,K. Furukawa and H. Nakashima

90. Room Temperature Deposition of Silicon Oxynitride Films with Low Stress Using Sputtering-Type Electron Cyclotron Resonance Plasmas
Mater. Res. Soc. Symp. Proc., Vol. 594, pp. 457-462(2000)
D. W. Gao, K. Furukawa, H. Nakashima, J. S. Gao, J. L. Wang, K. Muraoka

89. Electrical Properties of p- and n-GaSe Doped with As and Ge
Jpn. J. Appl. Phys., Vol. 39, No. 9A, pp. 5083-5084(2000)
S. Shigetomi, T. Ikari, H. Nakashima

88. Effects of Ion Irradiation on Silicon Oxidation in Electron Cyclotron Resonance Argon and Oxygen Mixed Plasma
J. Appl. Phys., Vol. 88, No. 3, pp. 1664-1669(2000)
S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa and H. Nakashima

87. Study of The Effects of Discharge Conditions and Substrate Temperature on Si Epitaxial Deposition Using Sputtering-Type Electron Cyclotron Resonance Plasma
J. Vac. Sci. and Tech. A, Vol. 18, No. 3, pp. 873-878(2000)
J. S. Gao, J. L. Wang, N. Sakai, K. Iwanaga, K. Muraoka, H. Nakashima,D. W. Gao and K. Furukawa

86. Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
Jpn. J. Appl. Phys., Vol. 39, No. 5A, pp. 2834-2838(2000)
J. S. Gao, H. Nakashima, J. L. Wang, K. Iwanaga, H. Nakashima, K. Ikeda,K. Furukawa and K. Muraoka

85. Verification of Preoxidation Effect on Deposition of Thin Gate-quality Silicon Oxide Films at Low Temperature by a Sputtering-type ECR Microwave Plasma
Materials Science and Engineering, B72, 128-131(2000)
K. Furukawa, D. W. Gao, H. Nakashima, H. Ijiri, K. Uchino and K. Muraoka

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